Manufacturing device for buried insulating layer type single crystal silicon carbide substrate
US7077875B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 7, 2005 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Feb 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.