Apparatus for manufacturing a semiconductor device
US7077929B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for manufacturing a semiconductor includes a polyhedral transfer chamber, a first process module for forming a gate dielectric layer by ALD, and a second process module for thermally treating the gate dielectric layer. The first process module is in communication with a first side of the transfer chamber. The second process module in communication with a second side of the transfer chamber. The apparatus further includes at least one load-lock chamber in communication with a third side of the transfer chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.