Patent · US Expired

Photolithographic mask

US7078133B2 · kind B2 · utility

2Cited by

3References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Lothar Bauch · Dresden, DE
Robert Feurle · Neubiberg, DE
Ina Voigt · Neuss, DE
Helmut Wurzer · Dresden, DE

Key dates

Filing date	Jan 29, 2003
Grant date	Jul 18, 2006
Priority date	—
Expiry date	Jun 22, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photolithographic mask has the advantage that a combination of dummy structures, whose pattern is imaged into the resist layer, and auxiliary structures, whose pattern is not imaged into the resist layer, makes it possible to achieve a significant improvement in the imaging properties of the main structures which are disposed at an edge of a region containing a multiplicity of main structures. In particular, constrictions at the structures can be significantly reduced or completely avoided and/or a so-called “tilting” of the structures under non-optimum focus conditions is significantly reduced or completely avoided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.