Thin germanium oxynitride gate dielectric for germanium-based devices
US7078300B2 · kind B2 · utility
4Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Sep 27, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Dec 13, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.