Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor dies
US7078310B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Jul 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a structure comprises an electrode of a lower MIM capacitor situated in a first interconnect metal layer of a semiconductor die. The structure further comprises a shared electrode of the lower MIM capacitor and an upper MIM capacitor. The structure further comprises an electrode of the upper MIM capacitor situated over the shared electrode. The electrode of the upper MIM capacitor is coupled to the electrode of the lower MIM capacitor through vias and a second interconnect metal layer. In one embodiment, the electrode of the upper MIM capacitor can be divided into two or more segments to allow additional paths for connectivity to reduce the resistance of an electrode of the composite MIM capacitor. In other embodiments, a method for fabricating various embodiments of the composite MIM capacitor is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.