Laser separated die with tapered sidewalls for improved light extraction
US7078319B2 · kind B2 · utility
9Cited by
34References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2001 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Dec 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image cuts into the first major surface of the semiconductor wafer to produce individual devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.