Metal deposit process
US7078340B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2001 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Jan 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and system for controllable deposit of copper onto an exposed surface of a workpiece, such as a semiconductor surface. A seed thickness of copper is optionally deposited onto the exposed surface, preferably using oxygen-free liquid ammonia to enhance this deposition. The workpiece exposed surface is then immersed in an electroplating solution, including copper and liquid ammonia at a suitable pressure and temperature, and copper is caused to plate onto the exposed surface at a controllable rate. When the copper deposited on the exposed surface reaches a selected total thickness, electroplating is discontinued, the electroplating solution is removed, and the gaseous and liquid ammonia are recovered and recycled for re-use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.