Method for manufacturing a semiconductor device
US7078345B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | May 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing a semiconductor device comprising forming a diffusion region containing arsenic impurity at a concentration of 1×1020 cm−3 or more in an element region of Si substrate which is isolated by an element isolating insulation film with a gate electrode being employed as a mask, depositing Ni metal all over the substrate, heat-treating the substrate at a temperature of less than 400° C., thereby forming a nickel silicide film containing Ni2Si on the diffusion region, removing unreacted Ni metal deposited on the element isolating insulation film, heat-treating the substrate at a temperature of 450° C. or more, thereby forming an NiSi film having a arsenic compound layer on the surface thereof, removing the arsenic compound layer by an alkaline liquid, depositing an interlayer insulating film the entire surface of the substrate, and forming a wiring layer piercing through the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.