Microelectronic device with depth adjustable sill
US7078723B2 · kind B2 · utility
11Cited by
14References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Apr 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device includes a substrate, and a patterned feature located over the substrate and a plurality of doped regions, wherein the patterned feature includes at least one electrode. The microelectronic device includes at least one sill region for the enhancement of electron and/or hole mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.