Gallium nitride crystals and wafers and method of making

US7078731B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Mark P. D'Evelyn · Fremont, US
• Dong-Sil Park · Schenectady, US
• Steven Francis LeBoeuf · Raleigh, US
• Larry Rowland · Scotia, US
• Kristi Jean Narang · Voorheesville, US
• Huicong Hong · Niskayuna, US
• Stephen Daley Arthur · Glenville, US
• Peter Micah Sandvik · Guilderland, US

Key dates

• Filing date: Dec 13, 2004
• Grant date: Jul 18, 2006
• Expiry date: Dec 13, 2024

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/406
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.