Semiconductor device and method of manufactuing the same
US7081386B2 · kind B2 · utility
8Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2004 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Jun 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.