Method of fabricating a p-type ohmic electrode in gallium nitride based optical device
US7081401B2 · kind B2 · utility
3Cited by
3References
2Claims
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Key dates
| Filing date | Mar 19, 2003 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | May 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A p-type ohmic electrode in a gallium nitride based(GaN based) optical device and a fabrication method thereof. The p-type ohmic electrode in a GaN based optical device is fabricated using a rutile structure transition metal layer, such as an Ru, Ir or Os layer, or an oxide layer thereof, or using a double layer comprised of an Ru layer as a base layer and an Ni layer, an ITO layer or an AuO layer on the Ru layer. Thus, the p-type ohmic electrode is good in light transmittance and is thermally stable while having low contact resistance with the p-GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.