Jong Lam Lee
58Patents
13h-index
26Co-inventors
84Inventor score
Filing activity: Jun 19, 1996 → Sep 11, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7928465B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 183 | Active |
| US7250638B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 71 | Expired |
| US7816705B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 48 | Active |
| US7569865B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 34 | Expired |
| US7563629B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7723737B2 | Light emitting device | Electricity | 27 | Active |
| US7989314B2 | Method of manufacturing a flexible device and method of manufacturing a flexible display | Electricity | 22 | Active |
| US9209223B2 | Light emitting device and method of manufacturing the same | Electricity | 22 | Active |
| US7588952B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7576368B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 19 | Active |
| US7462881B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 18 | Active |
| US7214325B2 | Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment | Electricity | 15 | Expired |
| US8384120B2 | Method of fabricating vertical structure LEDs | Emerging Cross-Sectional Technologies | 15 | Active |
| US7964884B2 | GaN compound semiconductor light emitting element and method of manufacturing the same | Electricity | 13 | Active |
| US5760418A | GaAs power semiconductor device operating at a low voltage and method for fabricating the same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US8274094B2 | GaN compound semiconductor light emitting element and method of manufacturing the same | Electricity | 10 | Active |
| US7859109B2 | Gallium nitride-based III-V group compound semiconductor device and method of manufacturing the same | Electricity | 7 | Active |
| US8476648B2 | Light emitting device and method of manufacturing the same | Electricity | 7 | Active |
| US8143640B2 | GaN compound semiconductor light emitting element and method of manufacturing the same | Electricity | 6 | Active |
| US8283687B2 | Light emitting device and method of manufacturing the same | Electricity | 5 | Active |
| US8552455B2 | Semiconductor light-emitting diode and a production method therefor | Electricity | 5 | Active |
| US5639677A | Method of making a gaAs power semiconductor device operating at a low voltage | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8039861B2 | GaN compound semiconductor light emitting element and method of manufacturing the same | Electricity | 4 | Active |
| US7081401B2 | Method of fabricating a p-type ohmic electrode in gallium nitride based optical device | Electricity | 3 | Expired |
| US8093618B2 | Multi-layer ohmic electrode, semiconductor light emitting element having multi-layer ohmic electrode, and method of forming same | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.