Gate-enhanced junction varactor with gradual capacitance variation
US7081663B2 · kind B2 · utility
24Cited by
10References
86Claims
0Family size
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Key dates
| Filing date | Jan 18, 2002 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Jan 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03B5/1243
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor junction varactor utilizes gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing zero-point threshold voltages for enabling the varactor capacitance to vary relatively gradually with a control voltage applied to the varactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.