High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure
US7082017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2004 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Dec 24, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with the second AP pinned layer interfacing the spacer layer. Each of the first and second AP pinned layers is composed of cobalt iron (CoFe) wherein the iron (Fe) content in the cobalt iron (CoFe) of one of the first and second AP pinned layers is greater than the iron (Fe) content in the cobalt iron (CoFe) in the other one of the first and second AP pinned layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.