Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions
US7082248B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 4, 2005 |
| Grant date | Jul 25, 2006 |
| Priority date | — |
| Expiry date | Oct 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region defined along an optical waveguide. The absorption region includes a first type of semiconductor material having a first refractive index. The apparatus also includes a multiplication region defined along the optical waveguide. The multiplication region is proximate to and separate from the absorption region. The multiplication region includes a second type of semiconductor material having a second refractive index. The first refractive index greater than the second refractive index such that an optical beam directed through the optical waveguide is pulled towards the absorption region from the multiplication region and absorbed in the absorption region to create electron-hole pairs from the optical beam. The multiplication region includes first and second doped regions defined along the optical waveguide. The first and second doped regions have opposite polarity to create an electric field to multiply the electrons created in the absorption region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.