Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate
US7084049B2 · kind B2 · utility
0Cited by
4References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Feb 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.