CMP system for metal deposition
US7084059B2 · kind B2 · utility
3Cited by
18References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jan 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.