Nitride based semiconductor device
US7084420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2005 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Apr 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.