SOI substrate
US7084459B2 · kind B2 · utility
7Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2002 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided an SOI substrate having an SOI structure with an insulating layer and a surface single crystal silicon layer successively formed on a single crystal wafer, the SOI substrate having no pit generation in the SOI layer, being producible at low cost and at high productivity and having excellent gettering capacity, wherein the SOI substrate contains nitrogen and carbon with a nitrogen content of no greater than 1×1016 atoms/cm3 and a carbon content of no greater than 1×1018 atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.