Parallel field effect transistor structure having a body contact
US7084462B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2005 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Apr 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
A first or primary field effect transistor (“FET”) is separated from a body contact thereto by one or more second FETs that are placed electrically in parallel with the first FET. In this way, the body of the first FET can be extended into the region occupied by the second FET to allow contact to be made to the body of the first FET. In one embodiment, the gate conductor of the first FET and a gate conductor of the second FET are integral parts of a unitary conductive pattern. The unitary conductive pattern is made desirably small, and can be made as small as the smallest predetermined linewidth for gate conductors on an integrated circuit which includes the body-contacted FET. In this way, area and parasitic capacitance are kept small.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.