Microelectromechanical device and method for producing it

US7084502B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Harald Bottner · Glückstadt, DE
• Axel Schubert · Munich, DE
• Joachim Nurnus · Neuenburg am Rhein, DE
• Martin Jagle · Waldkirch, DE

Key dates

• Filing date: Feb 4, 2004
• Grant date: Aug 1, 2006
• Expiry date: Feb 4, 2024

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0167
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.