Semiconductor device having a plurality of semiconductor chips and method for manufacturing the same
US7084513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2004 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Aug 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.