Group III-nitride layers with patterned surfaces
US7084563B2 · kind B2 · utility
5Cited by
19References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2005 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jul 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a crystalline substrate, a layer of a first group III-nitride located on a planar surface of the substrate, and a layer of a second group III-nitride located over the layer of the first group III-nitride. The first and second group III-nitrides have different alloy compositions. The layer of second group III-nitride may have a pattern of columnar holes or trenches therein. The apparatus may include a plurality of pyramidal field-emitters that include the second group III-nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.