High-frequency amplification device
US7084708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2004 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jan 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-frequency amplification device includes a high-frequency amplifier including input and output sections, a first capacitor including first and second electrodes, and a first insulation film interposed therebetween. The first electrode is connected to the output section via a first inductor, and the second electrode is grounded. The amplification device further comprises a second capacitor including third and fourth electrodes and a second insulation film interposed therebetween. The third electrode is formed of a material substantially identical to that of the first electrode, and the fourth electrode is formed of a material substantially identical to that of the second electrode. The second insulation film is formed of a material substantially identical to that of the first insulation film and has a thickness substantially identical to that of the first insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.