Method and its apparatus for measuring size and shape of fine patterns
US7084990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jan 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In size measurement of a semiconductor device, profiles of a pattern formed in a resist process are determined through an exposure/development simulation in respect of individual different combinations of exposure values and focus values to form a profile matrix and scattered light intensity distributions corresponding to the individual profiles are determined through calculation to form a scattered light library, thereby forming a profile library consisting of the profile matrix and scattered light library. A scattered light intensity distribution of an actually measured pattern is compared with the scattered light intensity distributions of the scattered light library and a profile of profile matrix corresponding to a scattered light intensity distribution of scattered light library having the highest coincidence is determined as a three-dimensional shape of the actually measured pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.