Low resistance antiparallel tab magnetoresistive sensor
US7085111B2 · kind B2 · utility
3Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Mar 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive sensor having bias stabilization tabs includes a protective cap layer. The protective cap layer prevents oxidation, avoids potential damage from using ion milling for oxidation removal, and lowers parasitic resistance. In one embodiment, a bias layer, having a central portion with quenched magnetic moment, is formed over the free layer with an intervening coupling layer. A disk drive is provided with the magnetoresistive sensor including a protective cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.