Monitoring of nitrided oxide gate dielectrics by determination of a wet etch
US7087440B2 · kind B2 · utility
0Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2003 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | May 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides, in one embodiment, a method method of monitoring a process for forming a nitridated oxide gate dielectric. A nitrided oxide dielectric layer is formed on a test substrate (110). The nitrided oxide dielectric layer is exposed to an etch process (120). A change in a property of the nitrided oxide dielectric layer is measured as a function of the etch process (130). Other embodiments advantageously incorporate the method into methods for making semiconductor devices and integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.