Semiconductor light-emitting device and semiconductor light-emitting device
US7087932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2001 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Mar 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.