lll-phosphide light emitting devices with thin active layers

US7087941B2 · kind B2 · utility

Assignee

• Philips Lumileds Lighting Company LLC · US

Inventors

• Nathan Gardner · Provo, US
• Fred A. Kish, Jr. · Palo Alto, US
• Herman C. Chui · Sunnyvale, US
• Stephen A. Stockman · معلمی نژاد, US
• Michael R. Krames · Los Altos, US
• Gloria Hofler · Sunnyvale, US
• Christopher Kocot · Redwood City, US
• Nicolas J. Moll · La Honda, US
• Tun Tan · Cupertino, US

Key dates

• Filing date: Nov 5, 2001
• Grant date: Aug 8, 2006
• Expiry date: Jan 10, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8242

Abstract

The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.