Electrostatic discharge protection circuit and semiconductor circuit therewith
US7087968B1 · kind B1 · utility
7Cited by
5References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2005 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | May 31, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/251
Abstract
An ESD protection circuit is adapted for an integrated circuit with a first power source and a second power source. The ESD protection circuit comprises a first silicon controlled rectifier (SCR), a second silicon controlled rectifier, and a parasitic diode. The gate of the first silicon controlled rectifier is coupled to a first power source, and the gate of the second silicon controlled rectifier is also coupled to the first power source line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.