Control of air gap position in a dielectric layer
US7087998B2 · kind B2 · utility
6Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Aug 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/3154
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.