Structures and methods for integration of ultralow-k dielectrics with improved reliability
US7088003B2 · kind B2 · utility
531Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jun 12, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved back end of the line (BEOL) interconnect structure comprising an ultralow k (ULK) dielectric is provided. The structure may be of the single or dual damascene type and comprises a dense thin dielectric layer (TDL) between a metal barrier layer and the ULK dielectric. Disclosed are also methods of fabrication of BEOL interconnect structures, including (i) methods in which a dense TDL is provided on etched opening of a ULK dielectric and (ii) methods in which a ULK dielectric is placed in a process chamber on a cold chuck, a sealing agent is added to the process chamber, and an activation step is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.