Semiconductor laser structure

US7088753B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Henning Riechert · Riemerling, DE
• Anton Egorov · Saint Petersburg, RU

Key dates

• Filing date: Dec 4, 2000
• Grant date: Aug 8, 2006
• Expiry date: Dec 4, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/34353
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The active layer (1) and the barrier layers (2) contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InxGa1-xAsyN1-y with varying factors x and y, where, in particular, x=0 and y=1.