Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device
US7091056B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 9, 2005 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III–V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III–V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III–V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.