Semiconductor method and device
US7091082B2 · kind B2 · utility
32Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jun 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.