Patent · US Expired

Method for producing a capacitor

US7091083B2 · kind B2 · utility

0Cited by

5References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Claus Dahl · Dresden, DE
Knut Stahrenberg · Wappingers Falls, US
Christoph Wilbertz · Gundelfingen, DE

Key dates

Filing date	Jul 9, 2004
Grant date	Aug 15, 2006
Priority date	—
Expiry date	Jul 9, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28525
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a capacitor comprises providing a raw structure having a substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an isolating layer. Above the first and second areas, an electrically conductive layer is arranged on the at least one dielectric layer. Further, a mask layer is deposited on the electrically conductive layer, wherein it is structured for generating a first mask above the first area. The method further comprises etching away the electrically conductive layer and at least one of the dielectric layers in the second area by means of the first mask and completing an active device in the second area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.