Semiconductor device and method of manufacturing the same
US7091114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2002 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Sep 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.