Method for doping a semiconductor body
US7091115B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Dec 23, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jun 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for doping a semiconductor body (2), in which an n-type doping is introduced into the semiconductor body, which is initially p-doped, for example, by means of ion irradiation preferably with protons, which n-type doping is then cancelled by the action of a laser beam (8) in specific regions (9) so that the original p-type doping is present in said regions (9).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.