Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US7091137B2 · kind B2 · utility
29Cited by
109References
52Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 9, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jul 31, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.