Method of fabricating silicon nitride nanodots
US7092287B2 · kind B2 · utility
513Cited by
58References
33Claims
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Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jul 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/72
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using N2 as the source gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.