Method and apparatus for high-speed thickness mapping of patterned thin films
US7095511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2001 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system is described that permits high-speed, high-resolution mapping of thicknesses (or other properties) of layers on patterned semiconductor wafers. The system comprises one or more spectrometers that each simultaneously image a plurality of spatial locations. In one example, the spectrometer comprises a two-dimensional CCD imager with one axis of the imager measuring spectral data and the other axis measuring spatial data. Spectral reflectance or transmission of the patterned wafer under test is obtained by passing the wafer under (or over) the imaging spectrometer(s) and taking sequential reflectance or transmission images for successive pluralities of spatial locations. The resulting spectral reflectance or transmission map can then be analyzed at discrete locations to determine the thicknesses or other properties of the layers at those locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.