Method for providing a redistribution metal layer in an integrated circuit
US7096581B2 · kind B2 · utility
5Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a portion having at least one active circuit area. The integrated circuit also includes a redistribution metal layer fabricated at least partially during fabrication of the portion of the integrated circuit. A method for fabricating an integrated circuit includes fabricating a portion of the integrated circuit, where the portion includes at least one active circuit area. The method also includes fabricating a redistribution metal layer at least partially during fabrication of the portion of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.