Group III nitride based semiconductor substrate and process for manufacture thereof
US7097920B2 · kind B2 · utility
8Cited by
3References
16Claims
0Family size
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Inventors
Key dates
| Filing date | Mar 24, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Mar 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor substrate of a group III nitride with a little warp, this invention provides a process comprising such steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.