Detection and classification of micro-defects in semi-conductors
US7098052B2 · kind B2 · utility
4Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2002 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for the detection and classification defects in a silicon or semi-conductor structure, in particular using room temperature photoluminescence effects, is described. The method involves directing a high intensity beam of light at a surface of a sample of silicon or semi-conductor structure to be tested producing a photoluminescence image, producing a reflected light image, combining the information in the two images to detect, map and identify and/or characterize micro-defects in the silicon or semi-conductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.