Semiconductor device, method for manufacturing the same, circuit substrate, electro-optical apparatus, and electronic equipment
US7098127B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Dec 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.