Semiconductor memory device and method for manufacturing semiconductor device
US7098147B2 · kind B2 · utility
20Cited by
11References
12Claims
0Family size
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Key dates
| Filing date | Aug 20, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Aug 20, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.