Inventor · Aizuwakamatsu, JP

Hiroyuki Nansei

22Patents
5h-index
21Co-inventors
65Inventor score

Filing activity: Aug 20, 2003 → Aug 25, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US7253046B2 Semiconductor memory device and manufacturing method thereof Electricity 40 Expired
US7410857B2 Semiconductor memory device and manufacturing method thereof Electricity 31 Active
US7098147B2 Semiconductor memory device and method for manufacturing semiconductor device Emerging Cross-Sectional Technologies 20 Expired
US8896051B2 Semiconductor device and method for manufacturing the same Electricity 13 Active
US8431919B2 Resistive change non-volatile semiconductor memory device Electricity 5 Active
US8143661B2 Memory cell system with charge trap Electricity 4 Active
US8691645B2 Method of manufacturing convex shaped thin-film transistor device Electricity 2 Active
US7888209B2 Non-volatile sonos-type memory device Electricity 2 Active
US7675107B2 Non-volatile SONOS-type memory device Electricity 2 Expired
US8264029B2 Convex shaped thin-film transistor device Electricity 2 Active
US9397144B2 Non-volatile semiconductor memory device Electricity 1 Active
US8859327B2 Method for manufacturing a non-volatile semiconductor memory device Electricity 1 Active
US8357965B2 Semiconductor device having multiple storage regions Electricity 1 Active
US8536048B2 Method of manufacturing electronic component Electricity 1 Active
US7879670B2 Method of manufacturing nonvolatile storage device Electricity 1 Active
US10256246B2 Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate Electricity 1 Active
US9231112B2 Convex shaped thin-film transistor device having elongated channel over insulating layer Electricity 0 Active
US8987909B2 Method of manufacturing electronic component Electricity 0 Active
US7479427B2 Semiconductor device and method of fabrication Electricity 0 Expired
US9748254B2 Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate Electricity 0 Active
US8952536B2 Semiconductor device and method of fabrication Electricity 0 Active
US7274592B2 Non-volatile memory and method of controlling the same Physics 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.