Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method
US7098153B2 · kind B2 · utility
0Cited by
6References
6Claims
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Key dates
| Filing date | Sep 16, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Sep 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.