Gallium nitride crystal and method of making same

US7098487B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Mark P. D'Evelyn · Fremont, US
• Dong-Sil Park · Schenectady, US
• Steven Francis LeBoeuf · Raleigh, US
• Larry Rowland · Scotia, US
• Kristi Jean Narang · Voorheesville, US
• Huicong Hong · Niskayuna, US
• Peter Micah Sandvik · Guilderland, US

Key dates

• Filing date: Dec 27, 2002
• Grant date: Aug 29, 2006
• Expiry date: Apr 10, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/406
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104 cm−1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.